Functional Inorganic Materials and Devices
- Yanze Song
Yanze Song
Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, People’s Republic of China
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- Zhidong Pan
Zhidong Pan
Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, People’s Republic of China
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- Chengming Luo
Chengming Luo
Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, People’s Republic of China
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- Yue Wang
Yue Wang
Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, People’s Republic of China
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- Tao Zheng
Tao Zheng
Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, People’s Republic of China
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- Yuan Pan
Yuan Pan
Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, People’s Republic of China
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- Nabuqi Bu
Nabuqi Bu
Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, People’s Republic of China
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- Ruiyang Xu
Ruiyang Xu
Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, People’s Republic of China
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- Nengjie Huo*
Nengjie Huo
Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering (School of Microelectronics), South China Normal University, Foshan 528225, People’s Republic of China
*Email: [emailprotected]
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ACS Applied Materials & Interfaces
Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX
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https://pubs.acs.org/doi/10.1021/acsami.5c01586
Published April 23, 2025
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Progress in artificial intelligence (AI) demands efficient data storage and high-speed processing. Traditional von Neumann architecture, with space separation of memory and computing units, struggles with increased data transmission, causing power inefficiency and date latency. To address this challenge, we designed a semi-floating gate transistor (SFGT) that integrates data storage and logical operation into a single device by employing a ferroelectric semiconductor α-In2Se3 as a semi-floating gate layer. Leveraging the ferroelectric polarization of α-In2Se3, the device exhibits improved non-volatile memory performance with a high program/erase ratio of 1 × 106 and reliable durability over 1000 cycles. Through the dual-gate modulation, the SFGT achieves multilevel storage function with at least seven controllable programming states and performs three types of digital logic gate operations (“AND”, “NOR”, and “OR”) at an ultralow bias of 10 mV. Compared to traditional FGT architectures, the α-In2Se3-based semi-floating gate structure achieves multifunctional integration of data storage and logic computing, effectively addressing energy consumption and time delay issues in data transmission, making it highly significant for applications in data-intensive and low-power integrated circuits.
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- Circuits
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- Polarization
- Transistors
- Two dimensional materials
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ACS Applied Materials & Interfaces
Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX
Click to copy citationCitation copied!
Published April 23, 2025
Publication History
Received
Accepted
Revised
Published
online
© 2025 American Chemical Society
Request reuse permissions
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